Search results for "Ferroelectric"

Hits ?▲	Authors	Title	Venue	Year	Link	Author keywords
132	Shoun Matsunaga, Takahiro Hanyu, Hiromitsu Kimura, Takashi Nakamura, Hidemi Takasu	Implementation of a Standby-Power-Free CAM Based on Complementary Ferroelectric-Capacitor Logic.	ASP-DAC	2007	DBLP DOI BibTeX RDF	0.35 micron, standby-power-free CAM, complementary ferroelectric-capacitor logic, CFC logic circuit, nonvolatile storage, ferroelectric CMOS, content-addressable memory
85	Hiromitsu Kimura, Takahiro Hanyu, Michitaka Kameyama	Multiple-Valued Logic-in-Memory VLSI Based on Ferroelectric Capacitor Storage and Charge Addition.	ISMVL	2002	DBLP DOI BibTeX RDF	Ferroelectric capacitor, multiple-valued current-mode logic circuit, arithmetic operation, full adder
47	Betty Prince	Nanotechnology and emerging memories.	SBCCI	2007	DBLP DOI BibTeX RDF	FeRAM, ferroelectric, floating body, nanocrystal, nitride storage, scaling issues, single electron memories, memory, variability, scaling, SRAM, MEMs, DRAM, flash, MRAM, phase change, non-volatile, molecular memory
47	Adam L. Young, Moti Yung	Bandwidth-Optimal Kleptographic Attacks.	CHES	2001	DBLP DOI BibTeX RDF	Leakage attacks, the Newton channel, design methodologies for asymmetric ciphers, kleptographic attacks, attack bandwidth, discrete logarithm based systems, tamper-proof hardware designs, public scrutiny, hardware technologies: EEPROM, ferroelectric, trust, DSA, ElGamal, subliminal channels, non-volatile memory
44	Ali Sheikholeslami, P. Glenn Gulak, Takahiro Hanyu	A Multiple-Valued Ferroelectric Content-Addressable Memory.	ISMVL	1996	DBLP DOI BibTeX RDF	ferroelectric, nonvolatile, memory, associative, CAM, content-addressable, multiple-valued
37	Takahiro Hanyu, Hiromitsu Kimura, Michitaka Kameyama	Multiple-Valued Content-Addressable Memory Using Metal-Ferroelectric-Semiconductor FETs.	ISMVL	1999	DBLP DOI BibTeX RDF
34	Tiancheng Li, Erping Li, Huali Duan, Zhufei Chu, Jian Wang, Wenchao Chen	Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor.	Microelectron. J.	2024	DBLP DOI BibTeX RDF
34	Pengying Chang, Mengqi Fan, Gang Du, Xiaoyan Liu, Yiyang Xie	Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
34	Jihyung Kim, Dahye Kim, Kyung Kyu Min, Matthias Kraatz, Taeyoung Han, Sungjun Kim	Effect of Al Concentration on Ferroelectric Properties in HfAlOx-Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
34	Jihyung Kim, Dahye Kim, Kyung Kyu Min, Matthias Kraatz, Taeyoung Han, Sungjun Kim	Effect of Al Concentration on Ferroelectric Properties in HfAlOx-Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applications.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
34	David Esseni, Francesco Driussi, Daniel Lizzit, Marco Massarotto, Mattia Segatto	Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices.	CoRR	2023	DBLP DOI BibTeX RDF
34	Chang Su, Zhongxin Liang, Zhiyuan Fu, Shaodi Xu, Kaifeng Wang, Puyang Cai, Liang Chen, Ru Huang, Qianqian Huang	New Insights into Read Current Margin and Memory Window of HfO2-based Ferroelectric FET with Re-exploration of the Role of Ferroelectric Dynamics and Interface Charges during Readout.	ESSDERC	2023	DBLP DOI BibTeX RDF
34	Kuo-Yu Hsiang, Jia-Yang Lee, Z.-F. Lou, F.-S. Chang, Z.-X. Li, C. W. Liu, T.-H. Hou, P. Su, Min-Hung Lee	Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf1-xZrXO2 for Quantum Computing Applications.	IRPS	2023	DBLP DOI BibTeX RDF
34	Om Prakash 0007, Kai Ni 0004, Hussam Amrouch	Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness.	IRPS	2023	DBLP DOI BibTeX RDF
34	Simon Thomann, Kai Ni 0004, Hussam Amrouch	Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FET.	ESSDERC	2022	DBLP DOI BibTeX RDF
34	K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin, Z.-F. Lou, C.-Y. Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, H.-C. Tseng, C.-C. Wang, W.-C. Ray, T.-H. Hou, T.-C. Chen, C.-S. Chang, Min-Hung Lee	Correlation between Access Polarization and High Endurance (~ 1012 cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2.	IRPS	2022	DBLP DOI BibTeX RDF
34	Inna Baraban, Andriy O. Semenov, Serhii Baraban, Olena O. Semenova, Mariia Baraban, Andrii Rudyk	Mathematical Model of Electric Polarization Switching in a Ferroelectric Capacitor for Ferroelectric RAM.	ITEST	2022	DBLP DOI BibTeX RDF
34	Zijie Zheng, Chen Sun 0010, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong	Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection.	VLSI Technology and Circuits	2022	DBLP DOI BibTeX RDF
34	Khoirom Johnson Singh, Lomash Chandra Acharya, Anand Bulusu, Sudeb Dasgupta	Significance of Organic Ferroelectric in Harnessing Transient Negative Capacitance Effect at Low Voltage Over Oxide Ferroelectric.	ISCAS	2022	DBLP DOI BibTeX RDF
34	Rajesh Saha	Simulation study on ferroelectric layer thickness dependence RF/Analog and linearity parameters in ferroelectric tunnel junction TFET.	Microelectron. J.	2021	DBLP DOI BibTeX RDF
34	Wanli Zhang, Guangzhao Wang, Minghua Tang, Lian Cui, Teng Wang, Pengyu Su, Zhuojun Chen, Xiaojiang Long, Yongguang Xiao, Shaoan Yan	Impact of Radiation Effect on Ferroelectric Al-Doped HfO2 Metal-Ferroelectric- Insulator-Semiconductor Structure.	IEEE Access	2020	DBLP DOI BibTeX RDF
34	Jorge Gomez 0005, Sourav Dutta, Kai Ni 0004, Benjamin Grisafe, Jeffrey Smith 0003, Asif Khan, Suman Datta	Significance of Multi and Few Domain Ferroelectric Switching Dynamics for Steep-Slope Non-Hysteretic Ferroelectric Field Effect Transistor.	DRC	2019	DBLP DOI BibTeX RDF
34	Benjamin Max, Michael Hoffmann 0008, Stefan Slesazeck, Thomas Mikolajick	Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks.	ESSDERC	2018	DBLP DOI BibTeX RDF
34	Atanu K. Saha, Sumeet Kumar Gupta	Modeling and Comparative Analysis of Hysteretic Ferroelectric and Anti-ferroelectric FETs.	DRC	2018	DBLP DOI BibTeX RDF
34	Yongguang Xiao, Minghua Tang, Jiancheng Li, Bo Jiang, John He	The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
27	Linda Dailey Paulson	Materials Breakthrough Could Eliminate Bootups.	Computer	2009	DBLP DOI BibTeX RDF	Adobe Systems, Digital home entertainment, Bootup, Ferroelectric, Strontium titanate, Rhomobile, Write-once-run-anywhere, Wiiitis, Nintendinitis, Mobile applications, Flash
20	Zsolt J. Horváth, Péter Basa	New Trends in Non-volatile Semiconductor Memories.	Towards Intelligent Engineering and Information Technology	2009	DBLP DOI BibTeX RDF	nanocrystal memories, SONOS, FeRAMs, flash memories, phase-change memories, MRAMs
20	Charles Augustine, Arijit Raychowdhury, Yunfei Gao, Mark S. Lundstrom, Kaushik Roy 0001	PETE: A device/circuit analysis framework for evaluation and comparison of charge based emerging devices.	ISQED	2009	DBLP DOI BibTeX RDF
20	Luc Gendre, Alban Foulonneau, Laurent Bigué	High-Speed Acquisition and Pre-processing of Polarimetric Image Sequences.	ACIVS	2008	DBLP DOI BibTeX RDF
20	Betty Prince	Embedded non-volatile memories.	SBCCI	2007	DBLP DOI BibTeX RDF	FeRAM, MONOS, PC-RAM, SONOS, floating gate memory, nanocrystal memory, nitride storage memory, trapping site memory, flash memory, embedded memory, non-volatile memory, MRAM
20	In Hwan Doh, Jongmoo Choi, Donghee Lee 0001, Sam H. Noh	Exploiting non-volatile RAM to enhance flash file system performance.	EMSOFT	2007	DBLP DOI BibTeX RDF	non-volatile RAM, metadata, file system, flash memory, experimental evaluation
20	Yadollah Eslami, Ali Sheikholeslami, P. Glenn Gulak, Shoichi Masui, Kenji Mukaida	An area-efficient universal cryptography processor for smart cards.	IEEE Trans. Very Large Scale Integr. Syst.	2006	DBLP DOI BibTeX RDF
20	Chih-Lyang Hwang, Chau Jan	State-Estimator-Based Feedback Control for a Class of Piezoelectric Systems With Hysteretic Nonlinearity.	IEEE Trans. Syst. Man Cybern. Part A	2005	DBLP DOI BibTeX RDF
20	Weisheng Chong, Sho Ogata, Masanori Hariyama, Michitaka Kameyama	Architecture of a Multi-Context FPGA Using Reconfigurable Context Memory.	IPDPS	2005	DBLP DOI BibTeX RDF
20	Arzu Sardarli, Igor M. Filanovsky, R. M. Sardarli, O. A. Samedov, I. Sh. Sadigov, A. I. Aslanov	Translation of the Phase Transition Temperature in TlInS2 Crystals with Cationic Impurity Doping.	ICMENS	2003	DBLP DOI BibTeX RDF
20	Bruce F. Cockburn	The Emergence of High-Density Semiconductor-Compatible Spintronic Memory.	ICMENS	2003	DBLP DOI BibTeX RDF
20	Arzu Sardarli, Igor M. Filanovsky, R. M. Sardarli, O. A. Samedov, I. Sh. Sadigov, A. I. Aslanov	Relaxor Properties of TlInS2 Composites with Nanodomain State.	ICMENS	2003	DBLP DOI BibTeX RDF
20	Koji Asari, Yukio Mitsuyama, Takao Onoye, Isao Shirakawa, Hiroshige Hirano, Toshiyuki Honda, Tatsuo Otsuki, Takaaki Baba, Teresa H. Meng	FeRAM Circuit Technology for System on a Chip.	Evolvable Hardware	1999	DBLP DOI BibTeX RDF
17	Jie Xu, Chu-Ming Guo, Cheng Yang, Hai-Feng Zhang	Theoretical Study of a Porous Silicon Cavity Based on Second Harmonic Waves Formed by Ferroelectric Crystals for Wide Range Multiphysical and Chemical Measurement.	IEEE Trans. Instrum. Meas.	2024	DBLP DOI BibTeX RDF
17	Sekeon Kim, Sehee Lim, Dong Han Ko, Tae Woo Oh, Seong-Ook Jung	Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation.	IEEE Trans. Circuits Syst. I Regul. Pap.	2024	DBLP DOI BibTeX RDF
17	Robin Athle, Mattias Borg	Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators.	Adv. Intell. Syst.	2024	DBLP DOI BibTeX RDF
17	Zhe Wang, Yan Liu, Jiuren Zhou, Genquan Han	Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories.	Microelectron. J.	2024	DBLP DOI BibTeX RDF
17	Zhicheng Xu, Che-Kai Liu, Chao Li, Ruibin Mao, Jianyi Yang, Thomas Kämpfe, Mohsen Imani, Can Li, Cheng Zhuo, Xunzhao Yin	FeReX: A Reconfigurable Design of Multi-bit Ferroelectric Compute-in-Memory for Nearest Neighbor Search.	CoRR	2024	DBLP DOI BibTeX RDF
17	Alexander Gagarin, Diana Tsyganova, Andrey Altynnikov, Andrey Komlev, Roman Platonov	An Adaptation of the Split-Cylinder Resonator Method for Measuring the Microwave Properties of Thin Ferroelectric Films in a "Thin Film - Substrate" Structure.	Sensors	2024	DBLP DOI BibTeX RDF
17	Albert Daimari, Ankit Chakusaru Deori, Amab Ratna Pawe, Ratul Kumar Baruah	Design of 3 bit/cell NAND Memory Array Based on Ferroelectric Field Effect Transistor.	VLSID	2024	DBLP DOI BibTeX RDF
17	Prabhat Kumar, Andrew Nonaka, Revathi Jambunathan, Girish Pahwa, Sayeef S. Salahuddin, Zhi Yao	FerroX: A GPU-accelerated, 3D phase-field simulation framework for modeling ferroelectric devices.	Comput. Phys. Commun.	2023	DBLP DOI BibTeX RDF
17	Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung	Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices.	IEEE J. Solid State Circuits	2023	DBLP DOI BibTeX RDF
17	Jose María García-Barceló, Alejandro Álvarez-Melcón, Sergio Arguedas Cuendis, Alejandro Díaz-Morcillo, Benito Gimeno, A. Kanareykin, Antonio Jose Lozano-Guerrero, Pablo Navarro, Walter Wuensch	On the Development of New Tuning and Inter-Coupling Techniques Using Ferroelectric Materials in the Detection of Dark Matter Axions.	IEEE Access	2023	DBLP DOI BibTeX RDF
17	Naima Guenifi, Shiromani Balmukund Rahi, Faiza Benmahdi, Houda Chabane	Optimization of tunneling current in ferroelectric tunnel FET using genetic algorithm.	J. Supercomput.	2023	DBLP DOI BibTeX RDF
17	Mudasir A. Khanday, Shazia Rashid, Farooq Ahmad Khanday	1T Spiking Neuron Using Ferroelectric Junctionless FET with Ultra-Low Energy Consumption of 24 aJ/Spike.	Neural Process. Lett.	2023	DBLP DOI BibTeX RDF
17	Swetaki Chatterjee, Nikhil Rangarajan, Satwik Patnaik, Dinesh Rajasekharan, Ozgur Sinanoglu, Yogesh Singh Chauhan	FerroCoin: Ferroelectric Tunnel Junction-Based True Random Number Generator.	IEEE Trans. Emerg. Top. Comput.	2023	DBLP DOI BibTeX RDF
17	Zhuosheng Lin, Zhen Fan 0012	A Ferroelectric Memristor-Based Transient Chaotic Neural Network for Solving Combinatorial Optimization Problems.	Symmetry	2023	DBLP DOI BibTeX RDF
17	Sehee Lim, Dong Han Ko, Se Keon Kim, Seong-Ook Jung	Cross-Coupled Ferroelectric FET-Based Ternary Content Addressable Memory With Energy-Efficient Match Line Scheme.	IEEE Trans. Circuits Syst. I Regul. Pap.	2023	DBLP DOI BibTeX RDF
17	Sabine M. Neumayer, Anton V. Ievlev, Alexander Tselev, Sergey A Basun, Benjamin S. Conner, Michael A Susner, Petro Maksymovych	Polarization-controlled volatile ferroelectric and capacitive switching in Sn2P2S6.	Neuromorph. Comput. Eng.	2023	DBLP DOI BibTeX RDF
17	Pankaj Sharma, Jan Seidel	Neuromorphic functionality of ferroelectric domain walls.	Neuromorph. Comput. Eng.	2023	DBLP DOI BibTeX RDF
17	Taehwan Moon, Hyun Jae Lee, Seung Geol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yun Seong Lee, Yoonsang Park, J. Joshua Yang, Jinseong Heo	Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing.	Neuromorph. Comput. Eng.	2023	DBLP DOI BibTeX RDF
17	Anna G. Razumnaya, Yuri A Tikhonov, Valerii M. Vinokur, Igor Lukyanchuk	Ferroelectric topologically configurable multilevel logic unit.	Neuromorph. Comput. Eng.	2023	DBLP DOI BibTeX RDF
17	Amol D. Gaidhane, Raghvendra Dangi, Shubham Sahay, Amit Verma 0006, Yogesh Singh Chauhan	A Computationally Efficient Compact Model for Ferroelectric Switching With Asymmetric Nonperiodic Input Signals.	IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.	2023	DBLP DOI BibTeX RDF
17	Xunzhao Yin, Yu Qian, Mohsen Imani, Kai Ni 0004, Chao Li 0065, Grace Li Zhang, Bing Li 0005, Ulf Schlichtmann, Cheng Zhuo	Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.	IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.	2023	DBLP DOI BibTeX RDF
17	Haoran Yu, Tiancheng Gong, Peng Yuan, Yuan Wang, Zhaomeng Gao, Xiaoxin Xu, Ying Sun, Ran Cheng, Jianfeng Gao 0005, Junfeng Li, Bing Chen, Qing Luo	Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Fenning Liu, Yue Peng, Wenwu Xiao, Yan Liu, Xiao Yu, Genquan Han	Impact of polarization switching on the effective carrier mobility of HfZrOx ferroelectric field-effect transistor.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Huan Liu, Jiajia Chen, Chengji Jin, Xiao Yu, Yan Liu, Genquan Han	Ferroelectric-like behaviors of metal-insulator-metal with amorphous dielectrics.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Pengfei Jiang, Kunran Xu, Jie Yu 0027, Yannan Xu, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong, Yang Yang, Yan Wang, Qing Luo	Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Xiaojie Wang, Zeyang Feng, Jingwei Cai, Hao Tong, Xiangshui Miao	All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Yulin Zhao, Yuan Wang, Donglin Zhang, Zhongze Han, Qiao Hu, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Qing Luo, Jianguo Yang, Hangbing Lv	A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin	Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Chengxu Wang, Hao Yu, Yichen Wang, Zichong Zhang, Xiangshui Miao, Xingsheng Wang	Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs.	Sci. China Inf. Sci.	2023	DBLP DOI BibTeX RDF
17	Longfei Li, Qijing Wang, Mengjiao Pei, Hengyuan Wang, Jianhang Guo, Ziqian Hao, Yating Li, Qinyong Dai, Kuakua Lu, Yun Li	Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon, Jong-Ho Lee 0002	1/f Noise in Synaptic Ferroelectric Tunnel Junction: Impact on Convolutional Neural Network.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Ngoc Thanh Duong, Yu-Chieh Chien, Heng Xiang, Sifan Li, Haofei Zheng, Yufei Shi, Kah-Wee Ang	Dynamic Ferroelectric Transistor-Based Reservoir Computing for Spatiotemporal Information Processing.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Xunzhao Yin, Franz Müller 0001, Qingrong Huang, Chao Li 0065, Mohsen Imani, Zeyu Yang, Jiahao Cai, Maximilian Lederer, Ricardo Olivo, Nellie Laleni, Shan Deng, Zijian Zhao, Zhiguo Shi 0001, Yiyu Shi 0001, Cheng Zhuo, Thomas Kämpfe, Kai Ni 0004	An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Sayani Majumdar, Ioannis Zeimpekis	Back-End and Flexible Substrate Compatible Analog Ferroelectric Field-Effect Transistors for Accurate Online Training in Deep Neural Network Accelerators.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Vivek Parmar, Franz Müller 0001, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe	Demonstration of Differential Mode Ferroelectric Field-Effect Transistor Array-Based in-Memory Computing Macro for Realizing Multiprecision Mixed-Signal Artificial Intelligence Accelerator.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang 0006	Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Dongseok Kwon, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Joon Hwang, Jong-Ho Bae, Daewoong Kwon, Jong-Ho Lee 0002	Analog Synaptic Devices Based on IGZO Thin-Film Transistors with a Metal-Ferroelectric-Metal-Insulator-Semiconductor Structure for High-Performance Neuromorphic Systems.	Adv. Intell. Syst.	2023	DBLP DOI BibTeX RDF
17	Elena Veselova, Anna Maslovskaya, Alexander Yu. Chebotarev	Size-Dependent Switching in Thin Ferroelectric Films: Mathematical Aspects and Finite Element Simulation.	Comput.	2023	DBLP DOI BibTeX RDF
17	Khoirom Johnson Singh, Lomash Chandra Acharya, Anand Bulusu, Sudeb Dasgupta	Negative capacitance gate stack and Landau FET-based voltage amplifiers and circuits: Impact of ferroelectric thickness and domain variations.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	Sheng Luo, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang	Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Stochastic Computing.	CoRR	2023	DBLP DOI BibTeX RDF
17	Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein	High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor.	CoRR	2023	DBLP DOI BibTeX RDF
17	Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Valeria Bragaglia, Youri Popoff, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein	A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory.	CoRR	2023	DBLP DOI BibTeX RDF
17	Xunzhao Yin, Yu Qian, Alptekin Vardar, Marcel Gunther, Franz Müller 0001, Nellie Laleni, Zijian Zhao, Zhouhang Jiang, Zhiguo Shi 0001, Yiyu Shi 0001, Xiao Gong, Cheng Zhuo, Thomas Kämpfe, Kai Ni 0004	A Ferroelectric Compute-in-Memory Annealer for Combinatorial Optimization Problems.	CoRR	2023	DBLP DOI BibTeX RDF
17	Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein	A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory.	CoRR	2023	DBLP DOI BibTeX RDF
17	Haotian Xu, Jianyi Yang, Cheng Zhuo, Thomas Kämpfe, Kai Ni 0004, Xunzhao Yin	Reconfigurable Frequency Multipliers Based on Complementary Ferroelectric Transistors.	CoRR	2023	DBLP DOI BibTeX RDF
17	Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed 0011, Rajiv V. Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni 0004	Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET.	CoRR	2023	DBLP DOI BibTeX RDF
17	Paritosh Meihar, Rowtu Srinu, Sandip Lashkare, Ajay Kumar Singh, Halid Mulaosmanovic, Veeresh Deshpande, Stefan Dünkel, Sven Beyer, Udayan Ganguly	Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications.	CoRR	2023	DBLP DOI BibTeX RDF
17	Yixin Xu, Yi Xiao, Zijian Zhao, Franz Müller 0001, Alptekin Vardar, Xiao Gong, Sumitha George, Thomas Kämpfe, Vijaykrishnan Narayanan, Kai Ni 0004	Embedding Security into Ferroelectric FET Array via In-Situ Memory Operation.	CoRR	2023	DBLP DOI BibTeX RDF
17	Yongtao Liu, Anna N. Morozovska, Eugene A. Eliseev, Kyle P. Kelley, Rama K. Vasudevan, Maxim A. Ziatdinov, Sergei V. Kalinin	Autonomous scanning probe microscopy with hypothesis learning: Exploring the physics of domain switching in ferroelectric materials.	Patterns	2023	DBLP DOI BibTeX RDF
17	Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi	Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO2 Gate Insulator for Analog Memory Application.	IEICE Trans. Electron.	2023	DBLP DOI BibTeX RDF
17	Nicolò Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam	Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges.	Proc. IEEE	2023	DBLP DOI BibTeX RDF
17	Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Maximilian Lederer, Yannick Raffel, Kai Ni 0004, Xunzhao Yin, Thomas Kämpfe, Gerald Gerlach	Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications.	ESSDERC	2023	DBLP DOI BibTeX RDF
17	Hannes Dahlberg, Lars-Erik Wernersson	Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films.	ESSDERC	2023	DBLP DOI BibTeX RDF
17	Mihaela Ioana Popovici, Jasper Bizindavyi, Gourab De, Dae Seon Kwon, Gouri Sankar Kar, Jan Van Houdt	Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconate.	ESSDERC	2023	DBLP DOI BibTeX RDF
17	M. Thesberg, Franz Schanovsky, Zlatan Stanojevic, Oskar Baumgartner, Markus Karner	A Study of the Variability and Design Considerations of Ferroelectric VNAND Memories With Polycrystalline Films Using An Experimentally Validated TCAD Model.	ESSDERC	2023	DBLP DOI BibTeX RDF
17	A. N. M. Nafiul Islam, Kai Ni 0004, Abhronil Sengupta	Cross-Layer Optimizations for Ferroelectric Neuromorphic Computing.	MWSCAS	2023	DBLP DOI BibTeX RDF
17	Yi Xiao, Yixin Xu, Shan Deng, Zijian Zhao, Sumitha George, Kai Ni 0004, Vijaykrishnan Narayanan	A Compact Ferroelectric 2T-(n+1)C Cell to Implement AND-OR Logic in Memory.	ISVLSI	2023	DBLP DOI BibTeX RDF
17	Tiang Teck Tan, Yu-Yun Wang, Joel Tan, Tian-Li Wu, Nagarajan Raghavan, Kin Leong Pey	A New Methodology to Precisely Induce Wake-Up for Reliability Assessment of Ferroelectric Devices.	IRPS	2023	DBLP DOI BibTeX RDF
17	Yishan Wu, Puyang Cai, Zhiwei Liu, Pengpeng Ren, Zhigang Ji	Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM.	IRPS	2023	DBLP DOI BibTeX RDF
17	Omkar Phadke, Khandker Akif Aabrar, Yuan-chun Luo, Sharadindu Gopal Kirtania, Asif Islam Khan, Suman Datta, Shimeng Yu	Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors.	IRPS	2023	DBLP DOI BibTeX RDF
17	Laurent Grenouillet, Justine Barbot, J. Laguerre, Simon Martin 0006, Catherine Carabasse, M. Louro, Messaoud Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, Thomas Magis, Carine Jahan, François Andrieu, Jean Coignus	Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited).	IRPS	2023	DBLP DOI BibTeX RDF
17	Yaru Ding, Xinwei Yu, Chu Yan, Zeping Weng, Yiming Qu, Yi Zhao	Interval time dependent wake-up effect of HfZrO ferroelectric capacitor.	IRPS	2023	DBLP DOI BibTeX RDF