Search results for "HEMT"

Hits ?▲	Authors	Title	Venue	Year	Link	Author keywords
85	Norfarariyanti Bte Parimon, Siti Suhaila Bte Mohd Yusof, Abdul Manaf Bin Hashim	Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device.	Asia International Conference on Modelling and Simulation	2008	DBLP DOI BibTeX RDF	Schottky diode, Rectenna, HEMT structure, IQ chip
66	Zon Fazlila Mohd Ahir, Ahmad Zarif Zulkifli, Abdul Manaf Hashim	Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification.	Asia International Conference on Modelling and Simulation	2008	DBLP DOI BibTeX RDF	Plasma wave, Interdigital, Negative conductance, HEMT, Terahertz
57	Marco Balsi, Francesco Centurelli, Piero Marietti, Giuseppe Scotti, Pasquale Tommasino, Alessandro Trifiletti, Giancarlo Valente	Validation of a statistical non-linear model of GaAs HEMT MMIC's by hypothesis testing and principal components analysis.	ISCAS	2006	DBLP DOI BibTeX RDF
57	Gaetano Palumbo, Pasquale Tommasino, Alessandro Trifiletti	Optimized design of source coupled logic gates in GaAs HEMT technology.	ISCAS (4)	2005	DBLP DOI BibTeX RDF
57	Chiaki Takano, Zhiping Yu, Robert W. Dutton	A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures.	IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.	1990	DBLP DOI BibTeX RDF
48	Takao Waho, Kevin J. Chen, Masafumi Yamamoto	A Literal Gate Using Resonant-Tunneling Devices.	ISMVL	1996	DBLP DOI BibTeX RDF	Resonant tunneling, quantum effect, HEMT, RTD, literal
37	Aderinto J. Ogunniyi, Stanley L. Henriquez, Caroline W. Karangu, Corey Dickens, Carl White	Accurate Modeling of Drain Current Derivatives of MESFET/HEMT Devices for Intermodulation Analysis.	ISCAS	2007	DBLP DOI BibTeX RDF
37	Bin Zhang, K. J. Chen, Ruan Gang, Richard M. M. Chen	A novel RTD-HEMT-RTD structure based on simulations.	ISCAS (1)	1999	DBLP DOI BibTeX RDF
37	Tahui Wang, Sheng-Jyh Wu, Chimoon Huang	Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters.	IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.	1993	DBLP DOI BibTeX RDF
28	Masafumi Yamamoto, Hideaki Matsuzaki, Toshihiro Itoh, Takao Waho, T. Akeyoshi, J. Osaka	Ultrahigh-Speed Circuits Using Resonant Tunneling Devices.	Great Lakes Symposium on VLSI	1999	DBLP DOI BibTeX RDF	HEMT, D-FF, optoelectronic circuit, ADC, resonant tunneling diode
28	Kanad Chakraborty, Pinaki Mazumder	Technology and layout-related testing of static random-access memories.	J. Electron. Test.	1994	DBLP DOI BibTeX RDF	Array layout, cell technology, Gallium Arsenide (GaAs), high electron mobility transistor (HEMT) RAMs, I DD testing, I DDQ testing
20	Jeongwon Cha, Minsik Ahn, Changhyuk Cho, Chang-Ho Lee, Joy Laskar	A charge-pump based 0.35µm CMOS RF switch driver for multi-standard operations.	ISCAS	2008	DBLP DOI BibTeX RDF
20	Takao Waho, Akinori Yamada, Hiroki Okuyama, Victor Khorenko, Thai Do, Werner Prost	A Four-Resonant-Tunneling-Diode (4RTD) NAND/NOR Logic Gate.	ISCAS	2007	DBLP DOI BibTeX RDF
20	Keisuke Eguchi, Masaru Chibashi, Takao Waho	A Design of 10-GHz Delta-Sigma Modulator using a 4-Level Differential Resonant-Tunneling Quantizer.	ISMVL	2005	DBLP DOI BibTeX RDF
20	Naokazu Muramatsu, Hiroshi Okazaki, Takao Waho	A novel oscillation circuit using a resonant-tunneling diode.	ISCAS (3)	2005	DBLP DOI BibTeX RDF
20	Yuki Tsuji, Takao Waho	Multiple-Input Resonant-Tunneling Logic Gates for Flash A/D Converter Applications.	ISMVL	2004	DBLP DOI BibTeX RDF
20	Marcelino Lázaro, Ignacio Santamaría, Carlos Pantaleón, Cesar Navarro, Antonio Tazón, Tomás Fernández Ibáñez	A Modular Neural Network for Global Modeling of Microwave Transistors.	IJCNN (4)	2000	DBLP DOI BibTeX RDF
20	Hideaki Matsuzaki, Toshihiro Itoh, Masafumi Yamamoto	A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs.	Great Lakes Symposium on VLSI	1999	DBLP DOI BibTeX RDF
20	Andreas Thiede, Zhi-Gong Wang, Michael Schlechtweg, Manfred Lang, Petra Leber, Zhihao Lao, Ulrich Nowotny, Volker Hurm, Michaela Rieger-Motzer, Manfred Ludwig, Martin Sedler, Klaus Köhler, Wolfgang Bronner, Jochen Hornung, Axel Hülsmann, Gudrun Kaufel, Bryan Raynor, Joachim Schneider, Theo Jakobus, Jürgen Schroth, Manfred Berroth	Mixed signal integrated circuits based on GaAs HEMTs.	IEEE Trans. Very Large Scale Integr. Syst.	1998	DBLP DOI BibTeX RDF
20	Takao Waho, Masafumi Yamamoto	Application of Resonant-Tunneling Quaternary Quantizer to Ultrahigh-Speed A/D Converter.	ISMVL	1997	DBLP DOI BibTeX RDF
20	Sundarar Mohan, Pinaki Mazumder	Analytical and simulation studies of failure modes in SRAMs using high electron mobility transistors.	IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.	1993	DBLP DOI BibTeX RDF
20	Hal R. Yeager, Robert W. Dutton	Improvement in norm-reducing Newton methods for circuit simulation.	IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.	1989	DBLP DOI BibTeX RDF
17	Aaron Wadsworth, Matthew Pearce, Duleepa J. Thrimawithana	A Cryogenic 3-kW GaN E-HEMT Synchronous Buck Converter.	IEEE Trans. Ind. Electron.	2024	DBLP DOI BibTeX RDF
17	Jinyao Zhang, Yi Huang, Jiafeng Zhou	A Wide Dynamic Range Rectifier Based on HEMT With a Variable Self-Bias Voltage.	IEEE Trans. Circuits Syst. II Express Briefs	2024	DBLP DOI BibTeX RDF
17	Nadim Ahmed, Gourab Dutta	Extraction of device parameters from capacitance-voltage characteristics of p-GaN/AlGaN/GaN HEMT.	Microelectron. J.	2024	DBLP DOI BibTeX RDF
17	Haiyi Cai, Jincan Zhang, Shaowei Wang, Min Liu, Juwei Zhang	Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm.	Microelectron. J.	2024	DBLP DOI BibTeX RDF
17	Soyeon Seo, Jinho Lee, Yongho Lee, Hyunchol Shin	A 28 GHz 5-Bit Phase Shifter MMIC with 5.4° RMS Phase Error in GaN HEMT Process.	ICEIC	2024	DBLP DOI BibTeX RDF
17	Mingqiang Geng, Giovanni Crupi, Jialin Cai	Accurate and Effective Nonlinear Behavioral Modeling of a 10-W GaN HEMT Based on LSTM Neural Networks.	IEEE Access	2023	DBLP DOI BibTeX RDF
17	Longfei Yang, Huiqing Sun, Ruipeng Lv, Zhen Liu, Yuanhao Zhang, Penglin Wang, Yuan Li, Yong Huang, Zhiyou Guo	Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction.	IEEE Access	2023	DBLP DOI BibTeX RDF
17	Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar, Amit Krishna Dwivedi, Manisha Guduri, Aminul Islam 0002	Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers.	IEEE Access	2023	DBLP DOI BibTeX RDF
17	Wenjuan Mei, Zhen Liu 0003, Chaowu Pan, Ouhang Li, Yuanzhang Su, Qi Zhou	Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses.	IEEE Trans. Instrum. Meas.	2023	DBLP DOI BibTeX RDF
17	Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang	Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal	Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari	Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	Nisha Chugh, Subhasis Haldar, Monika Bhattacharya, R. S. Gupta	Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	Ahmet Toprak, Ekmel Özbay	Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhixiang Zhang	9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	Haiyi Cai, Jincan Zhang, Min Liu, Shi Yang, Shaowei Wang, Bo Liu 0031, Juwei Zhang	Adaptive particle swarm optimization based hybrid small-signal modeling of GaN HEMT.	Microelectron. J.	2023	DBLP DOI BibTeX RDF
17	Masaru Sato 0001, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe	Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier.	IEICE Trans. Electron.	2023	DBLP DOI BibTeX RDF
17	Pere Lluís Gilabert, Jose-Ramon Perez-Cisneros, Zhixiong Ren, Gabriel Montoro, María de Las Nieves Ruiz Lavín, Jose A. García 0002	Digital Predistortion Linearization of a GaN HEMT Push-Pull Power Amplifier for Cable Applications With High Fractional Bandwidth.	IEEE Trans. Broadcast.	2023	DBLP DOI BibTeX RDF
17	Lorenzo Pagnini, Giovanni Collodi, Alessandro Cidronali	A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications.	Sensors	2023	DBLP DOI BibTeX RDF
17	Jeong-Geun Kim, Donghyun Baek	A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology.	Sensors	2023	DBLP DOI BibTeX RDF
17	Hyeonseok Lee, Hyeong-Geun Park, Van-Du Le, Van-Phu Nguyen, Jeong-Moon Song, Bok-Hyung Lee, Jung-Dong Park	X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology.	Sensors	2023	DBLP DOI BibTeX RDF
17	Xuefei Xuan, Zhiqun Cheng, Zhiwei Zhang, Tingwei Gong, Guohua Liu, Chao Le	Design of a highly efficient 0.6-4.5GHz multioctave bandwidth GaN-HEMT power amplifier.	IEICE Electron. Express	2023	DBLP DOI BibTeX RDF
17	Jianjun Ding, Haomiao Wei, Yanzhe Wang, Zhengwei Lu, Wuchang Ding	A distributed small signal model extraction method based on FW-EM simulation for InP HEMT.	IEICE Electron. Express	2023	DBLP DOI BibTeX RDF
17	Dongyang Yan, Yang Zhang 0081, Mark Ingels, Piet Wambacq	A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications.	PRIME	2023	DBLP DOI BibTeX RDF
17	Zhenkai Ding, Chupeng Yi, Yang Lu, Xiaohua Ma	A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15μm GaN HEMT Technology.	ICNCC	2023	DBLP DOI BibTeX RDF
17	Bagylan Kadirbay, Saddam Husain, Anwar Jarndal, Mohammad S. Hashmi	Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz.	ICM	2023	DBLP DOI BibTeX RDF
17	N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert	Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.	IRPS	2023	DBLP DOI BibTeX RDF
17	Wenjuan Mei, Chaowu Pan, Zhen Liu 0003, Yuanzhang Su, Yusong Mei, Qi Zhou	Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation.	I2MTC	2023	DBLP DOI BibTeX RDF
17	Kashif Khan, Saddam Husain, Galymzhan Nauryzbayev, Mohammad S. Hashmi	Development and Evaluation of ANN, ACOR-ANN, ALO-ANN Based Small-Signal Behavioral Models for GaN-on-Si HEMT.	ICECS	2023	DBLP DOI BibTeX RDF
17	Qiang Ma 0009, Xiaojun Bi 0003	High-Efficiency Class-B/F W-Band Balanced Frequency Sixtupler in GaN HEMT Technology.	ICTA	2023	DBLP DOI BibTeX RDF
17	Weihao Lu 0005, Sheng Li, Siyang Liu 0002, Yanfeng Ma, Long Zhang, Jiaxing Wei, Weifeng Sun, Yiheng Li, Yuanyang Xia, Ke Wang, Tinggang Zhu	Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT.	ICTA	2023	DBLP DOI BibTeX RDF
17	Yushan Liu, Jianyu Cao, Xiao Li, Yupeng Liu	Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit.	IECON	2023	DBLP DOI BibTeX RDF
17	Cristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay	Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications.	BCICTS	2023	DBLP DOI BibTeX RDF
17	Anthony E. Parker, Simon J. Mahon	GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications.	BCICTS	2023	DBLP DOI BibTeX RDF
17	Ji-Seung Seo, Soo-Chang Chae, Kwang-Ho Ahn, Ki-Jin Kim	A Design of Low Noise InP HEMT LNA based on device modeling.	ICTC	2023	DBLP DOI BibTeX RDF
17	G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen	Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics.	ISCAS	2023	DBLP DOI BibTeX RDF
17	Zhongzhiguang Lu, Hanlin Xie, Jiaming Piao, Wei Zhengzhe, Ng Geok Ing, Yuanjin Zheng	A Wideband GaN HEMT Modelling with Comprehensive Hybrid Parameter Extraction for 5G Power Amplifiers.	ISCAS	2023	DBLP DOI BibTeX RDF
17	D. Nakajima, K. Nishimura, M. Watanabe, T. T. Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou	Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal.	OFC	2023	DBLP DOI BibTeX RDF
17	Junzhe Tan, Dongyi Yang, Shiqiang Wu, Yuhao Zhu 0004, Yaoyao Pan, Pengju Cui, Wen Liu	Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters.	ICICDT	2023	DBLP DOI BibTeX RDF
17	Nicholas C. Miller, Matt Grupen, John D. Albrecht	Recent Advances in GaN HEMT Modeling using Fermi Kinetics Transport.	DRC	2023	DBLP DOI BibTeX RDF
17	F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper	W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz.	DRC	2023	DBLP DOI BibTeX RDF
17	Lingyan Shen, Xinhong Cheng, Li Zheng, Yuehui Yu	A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability.	DRC	2023	DBLP DOI BibTeX RDF
17	Sami Ghedira, Abdelaali Fargi, Adel Kalboussi	On The Effect Of Optical Power On Quantum Dot HEMT Transistor.	SSD	2023	DBLP DOI BibTeX RDF
17	Jialin Cai, Giovanni Gugliandolo, Zlatica Marinkovic, Mariangela Latino, Enza Fazio, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Nicola Donato	GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks.	MetroXRAINE	2023	DBLP DOI BibTeX RDF
17	Fabian Thome, Laurenz John, Bersant Gashi, Axel Tessmann, Arnulf Leuther, Sébastien Chartier	InGaAs HEMT Technology for Submillimeter-Wave and Ultra-Wideband Monolithic Integrated Circuits.	IGARSS	2023	DBLP DOI BibTeX RDF
17	Kashif Khan, Saddam Husain, Galymzhan Nauryzbayev, Mohammad S. Hashmi	On Temperature-Dependent Small-Signal Behavioral Modelling of GaN HEMT Using GWO-PSO and WOA.	ISNCC	2023	DBLP DOI BibTeX RDF
17	Bagylan Kadirbay, Saddam Husain, Mohammad S. Hashmi	Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method.	ISNCC	2023	DBLP DOI BibTeX RDF
17	Jia Guo, Giovanni Crupi, Jialin Cai	A Novel Design Methodology for a Multioctave GaN-HEMT Power Amplifier Using Clustering Guided Bayesian Optimization.	IEEE Access	2022	DBLP DOI BibTeX RDF
17	Nipun Sharma, Adarsh Nigam, Dmitry Lobanov, Ankur Gupta, Alexey Novikov, Mahesh Kumar	Mercury (II) Ion Detection Using AgNWs-MoS2 Nanocomposite on GaN HEMT for IoT-Enabled Smart Water Quality Analysis.	IEEE Internet Things J.	2022	DBLP DOI BibTeX RDF
17	Shaowei Wang, Jincan Zhang, Min Liu, Bo Liu 0031, Jinchan Wang, Shi Yang	Large-Signal Behavior Modeling of GaN P-HEMT Based on GA-ELM Neural Network.	Circuits Syst. Signal Process.	2022	DBLP DOI BibTeX RDF
17	Mousa Karimi, Mohamed Ali 0001, Amir Aghajani, Ahmad Hassan, Mohamad Sawan, Benoit Gosselin	A 9.2-ns to 1-s Digitally Controlled Multituned Deadtime Optimization for Efficient GaN HEMT Power Converters.	IEEE Trans. Circuits Syst. I Regul. Pap.	2022	DBLP DOI BibTeX RDF
17	Nisarga Chand, Sarosij Adak, Sanjit Kumar Swain, Sudhansu Mohan Biswal, Angsuman Sarkar	Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier.	Comput. Electr. Eng.	2022	DBLP DOI BibTeX RDF
17	Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao	Unidirectional p-GaN gate HEMT with composite source-drain field plates.	Sci. China Inf. Sci.	2022	DBLP DOI BibTeX RDF
17	Manishankar Prasad Gupta, Pradeep Gorre, Sandeep Kumar 0003, Venugopal Nulu	A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques.	Microelectron. J.	2022	DBLP DOI BibTeX RDF
17	Baozhu Wang, Jinyuan Zhao, Ming Zhang, Lin Yang 0006, Jianchao Wang, Weimin Hou	Lifetime prediction and analysis of AlGaN/GaN HEMT devices under temperature stress.	Microelectron. J.	2022	DBLP DOI BibTeX RDF
17	Shaowei Wang, Jincan Zhang, Shi Yang, Na Li, Jinchan Wang, Min Liu	Behavioral-level modeling of GaN HEMT small-signal intrinsic noise based on DE-SVR algorithm.	Microelectron. J.	2022	DBLP DOI BibTeX RDF
17	Mario Cacciato, Giuseppe Aiello, Francesco Gennaro, Salvatore Mita, Dario Patti, Giacomo Scelba, Arjun Sujeeth	Power Loss Modelling of GaN HEMT based 3L ANPC Three Phase Inverter for different PWM Techniques.	CoRR	2022	DBLP DOI BibTeX RDF
17	Luong Duy Manh, Van-Phuc Hoang, Xuan Nam Tran	A Cost-Effective 5-W GaN HEMT Power Amplifier for Sub-6-GHz 5G Wireless Communications.	Mob. Networks Appl.	2022	DBLP DOI BibTeX RDF
17	Akio Wakejima, Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura	AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications.	IEICE Trans. Electron.	2022	DBLP DOI BibTeX RDF
17	Aoi Oyane, Thilak Senanayake, Mitsuru Masuda, Jun Imaoka, Masayoshi Yamamoto	13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by 'L-S Network'.	IEICE Trans. Electron.	2022	DBLP DOI BibTeX RDF
17	Jian Jin, Mengyuan Sun, Yannan Yang, Min Xu, David Wei Zhang	A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression.	IEICE Electron. Express	2022	DBLP DOI BibTeX RDF
17	Mamta Pradhan, Matthias Moser, Mohammed Alomari, Joachim N. Burghartz, Ingmar Kallfass	Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure.	ESSDERC	2022	DBLP DOI BibTeX RDF
17	Loizos Efthymiou, Martin Arnold, Giorgia Longobardi, Florin Udrea	A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit.	ESSDERC	2022	DBLP DOI BibTeX RDF
17	Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.	IRPS	2022	DBLP DOI BibTeX RDF
17	Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour	DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited).	IRPS	2022	DBLP DOI BibTeX RDF
17	Jian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, Walter Wohlmuth, Chih-Cherng Liao, Ching-Ho Li, Shoa-Chang Huang, Ke-Horng Chen	Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection.	IRPS	2022	DBLP DOI BibTeX RDF
17	Hao Lu, Likun Zhou, Longge Deng, Ling Yang 0003, Bin Hou, Xiaohua Ma, Yue Hao	First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications.	ICTA	2022	DBLP DOI BibTeX RDF
17	Lei Huang, Huanpeng Wang, Qingzhi Wu, Shuman Mao, Yuehang Xu	Characterization and Modeling of Trapping Effects in GaAs Enhanced HEMT under High Input Dynamic Range.	ICTA	2022	DBLP DOI BibTeX RDF
17	Yinling Hou, Junqing Xu, Shiyuan Wang, Diang Li, Yuanbo Guo, Xiaohua Zhang	Design of Digital-controlled Two-stage AC/DC Converter Based on GaN HEMT.	IECON	2022	DBLP DOI BibTeX RDF
17	Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata	Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network.	BCICTS	2022	DBLP DOI BibTeX RDF
17	Kyle M. Bothe, Matthew R. King, Jia Guo, Yueying Liu, Saptha Sriram, Jeremy Fisher, Scott T. Sheppard, Basim Noori	Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate.	BCICTS	2022	DBLP DOI BibTeX RDF
17	Keiichi Matsushita, Chih-Yuan Chan, Ju-Hsien Lin, Sheng-Wen Peng, Hung-Kuan Lo, Yu-Syuan Lin, Cheng-Kuo Lin	Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications.	BCICTS	2022	DBLP DOI BibTeX RDF
17	Ryan Fang, Dylan Ma, Ujwal Radhakrishna, Lan Wei	MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects.	BCICTS	2022	DBLP DOI BibTeX RDF
17	Youngmin Kim, Hongjong Park, Iljin Lee, Joonhoi Hur, Sangmin Yoo	High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications.	VLSI Technology and Circuits	2022	DBLP DOI BibTeX RDF
17	Yu-Yung Kao, Tz-Wun Wang, Sheng-Hsi Hung, Yong-Hwa Wen, Tzu-Hsien Yang, Si-Yi Li, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai	A Monolithic GaN-Based Driver and GaN Power HEMT with Diode-Emulated GaN Technique for 50MHz Operation and Sub-0.2ns Deadtime Control.	ISSCC	2022	DBLP DOI BibTeX RDF
17	Eungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing	First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates.	DRC	2022	DBLP DOI BibTeX RDF
17	Saddam Husain, Khamida Begaliyeva, Alisher Aitbayev, Muhammad Akmal Chaudhary, Mohammad S. Hashmi	Decision Tree Based Small-Signal Modelling of GaN HEMT and CAD Implementation.	ICCE	2022	DBLP DOI BibTeX RDF
17	Chanchal, Ajay Kumar Visvkarma, Hardhyan Sheoran, Amit Malik, Robert Laishram, Dipendra Singh Rawal, Manoj Saxena	Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method.	VDAT	2022	DBLP DOI BibTeX RDF