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Publication years (Num. hits)
2001-2005 (30) 2006-2007 (29) 2008-2009 (28) 2010 (16) 2011-2012 (28) 2013-2014 (20) 2015 (16) 2016-2017 (16) 2018-2019 (22) 2020-2021 (22) 2022-2023 (10)
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article(123) book(1) inproceedings(112) phdthesis(1)
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The graphs summarize 46 occurrences of 38 keywords

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Found 237 publication records. Showing 237 according to the selection in the facets
Hits ? Authors Title Venue Year Link Author keywords
10David Wolpert 0001, Paul Ampadu Normal and Reverse Temperature Dependence in Variation-Tolerant Nanoscale Systems with High-k Dielectrics and Metal Gates. Search on Bibsonomy NanoNet The full citation details ... 2008 DBLP  DOI  BibTeX  RDF Reverse temperature dependence, high-k dielectric, variation-tolerant, metal gate
10A. Madan, S. C. Bose, P. J. George, Chandra Shekhar 0001 Evaluation of Device Parameters of HfO2/SiO2/Si Gate Dielectric Stack for MOSFETs. Search on Bibsonomy VLSI Design The full citation details ... 2005 DBLP  DOI  BibTeX  RDF Direct Tunneling, gate leakage current, high-K gate stack, MOSFETs
9Joseph Casamento, Kazuki Nomoto, Thai-Son Nguyen, Hyunjea Lee, Chandrasekhar Savant, Lei Li 0023, Austin Hickman, Takuya Maeda, Yu-Tsun Shao, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel J. Hannan, David A. Muller, Huili Grace Xing, Debdeep Jena AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality. Search on Bibsonomy BCICTS The full citation details ... 2023 DBLP  DOI  BibTeX  RDF
8Ru Huang, HanMing Wu, Jinfeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, Runsheng Wang, Liangliang Zhang, Xing Zhang 0002, Yangyuan Wang Challenges of 22 nm and beyond CMOS technology. Search on Bibsonomy Sci. China Ser. F Inf. Sci. The full citation details ... 2009 DBLP  DOI  BibTeX  RDF 22 nm technology node, device architectures, metal gate/high K dielectrics, ultra low K dielectrics, CMOS technology
8Yangyuan Wang, Xing Zhang 0002, Xiaoyan Liu, Ru Huang Novel devices and process for 32 nm CMOS technology and beyond. Search on Bibsonomy Sci. China Ser. F Inf. Sci. The full citation details ... 2008 DBLP  DOI  BibTeX  RDF high-k, non-planar MOSFET, quasi-ballistic transport, CMOS technology, metal gate
7Kelin J. Kuhn CMOS scaling beyond 32nm: challenges and opportunities. Search on Bibsonomy DAC The full citation details ... 2009 DBLP  DOI  BibTeX  RDF high-k, CMOS, orientation, strain, metal-gate
6Samar K. Saha Modeling Process Variability in Scaled CMOS Technology. Search on Bibsonomy IEEE Des. Test Comput. The full citation details ... 2010 DBLP  DOI  BibTeX  RDF compact variability modeling, gate-oxide thickness variability, high-k dielectric, line-edge roughness, polysilicon granularity, random discrete dopants, scaled CMOS technology, statistical compact modeling, design and test, process variability, metal gate
6Tae-Hwan Hyun, Won-Ju Cho Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors. Search on Bibsonomy Sensors The full citation details ... 2023 DBLP  DOI  BibTeX  RDF
6Kamal Hosen, Md. Sherajul Islam, Catherine Stampfl, Jeongwon Park Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio. Search on Bibsonomy IEEE Access The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
6Shaun Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, Philex Fan, Chia-En Huang, Yu-Der Chih, Yih Wang, Jonathan Chang A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. Search on Bibsonomy VLSI Circuits The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
6Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu 0010, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices. Search on Bibsonomy IEEE Access The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
6Jing-Chyi Liao, Paul Ko, M. H. Hsieh, Zheng Zeng Self-healing LDMOSFET for high-voltage application on high-k/metal gate CMOS process. Search on Bibsonomy IRPS The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
6Deepa Anand, M. Swathi, A. Purushothaman, Sundararaman Gopalan Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate. Search on Bibsonomy ICACDS (1) The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
6Shweta Shree, Umesh Chandra Pancholi Fabrication and study of various characteristics of high performance iii-v mosfets with high-k dielectrics. Search on Bibsonomy ICACCI The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
6Sheng-Po Fang, Kyoung-Tae Kim, Todd Schumann, Yong-Kyu Yoon Fabrication of high-aspect-ratio nanoporous high-k MTiO3 (M= Ba, Sr, or BaxSr1-x) using anodization and hydrothermal processes. Search on Bibsonomy NEMS The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
6A. Benoist, S. Denorme, X. Federspiel, Bruno Allard, Philippe Candelier Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. Search on Bibsonomy IRPS The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
6Jungyul Pyo, Youngmin Shin, Hoi-Jin Lee, Sung-il Bae, Min-Su Kim, Kwangil Kim, Ken Shin, Yohan Kwon, Heungchul Oh, Jaeyoung Lim, Dong-Wook Lee, Jongho Lee, Inpyo Hong, Kyungkuk Chae, Heon-Hee Lee, Sung-Wook Lee, Seongho Song, Chunghee Kim, Jin-Soo Park, Heesoo Kim, Sunghee Yun, Ukrae Cho, Jae Cheol Son, Sungho Park 23.1 20nm high-K metal-gate heterogeneous 64b quad-core CPUs and hexa-core GPU for high-performance and energy-efficient mobile application processor. Search on Bibsonomy ISSCC The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
6S. H. Yang, J. Y. Sheu, M. K. Ieong, M. H. Chiang, T. Yamamoto, J. J. Liaw, S. S. Chang, Y. M. Lin, T. L. Hsu, J. R. Hwang, J. K. Ting, C. H. Wu, K. C. Ting, F. C. Yang, C. M. Liu, I. L. Wu, Y. M. Chen, S. J. Chent, K. S. Chen, J. Y. Cheng, M. H. Tsai, W. Chang, R. Chen, C. C. Chen, T. L. Lee, C. K. Lin, S. C. Yang, Y. M. Sheu, J. T. Tzeng, L. C. Lu, S. M. Jang, Carlos H. Diaz, Yuh-Jier Mii 28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications. Search on Bibsonomy CICC The full citation details ... 2011 DBLP  DOI  BibTeX  RDF
6W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2008 DBLP  DOI  BibTeX  RDF
6Y. H. Kim, Rino Choi, R. Jha, J. H. Lee, Veena Misra, J. C. Lee Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2004 DBLP  DOI  BibTeX  RDF
5Nihar R. Mohapatra, Madhav P. Desai, V. Ramgopal Rao Detailed Analysis of FIBL in MOS Transistors with High-K Gate Dielectrics. Search on Bibsonomy VLSI Design The full citation details ... 2003 DBLP  DOI  BibTeX  RDF
5Nihar R. Mohapatra, Arijit Dutta, Madhav P. Desai, V. Ramgopal Rao Effect Of Fringing Capacitances In Sub 100 Nm Mosfet's With High-K Gate Dielectrics. Search on Bibsonomy VLSI Design The full citation details ... 2001 DBLP  DOI  BibTeX  RDF
4Garima Thakral, Saraju P. Mohanty, Dhruva Ghai, Dhiraj K. Pradhan A DOE-ILP assisted conjugate-gradient based power and stability optimization in High-K Nano-CMOS SRAM. Search on Bibsonomy ACM Great Lakes Symposium on VLSI The full citation details ... 2010 DBLP  DOI  BibTeX  RDF nano-CMOS, power, leakage, SRAM, static noise margin
4Chenyue Ma, Bo Li, Lining Zhang, Jin He 0003, Xing Zhang 0002, Xinnan Lin, Mansun Chan A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. Search on Bibsonomy ISQED The full citation details ... 2009 DBLP  DOI  BibTeX  RDF
4D. Vinay Kumar, Nihar R. Mohapatra, Mahesh B. Patil, V. Ramgopal Rao Application of Look-up Table Approach to High-K Gate Dielectric MOS Transistor circuits. Search on Bibsonomy VLSI Design The full citation details ... 2003 DBLP  DOI  BibTeX  RDF
3Lijuan Wu, Tao Qiu, Xuanting Song, Banghui Zhang, Heng Liu, Qing Liu Analytical model for high-k SOI pLDMOS with self-adaptive balance of polarization charge. Search on Bibsonomy Microelectron. J. The full citation details ... 2023 DBLP  DOI  BibTeX  RDF
3X. Federspiel, A. Griffon, M. Barlas, P. Lamontagne Effect of Frequency on Reliability Of High-K MIM Capacitors. Search on Bibsonomy IRPS The full citation details ... 2023 DBLP  DOI  BibTeX  RDF
3Shraddha Pali, Ankur Gupta High-k field plate DeNMOS design for enhanced performance and electrothermal SOA in switching applications. Search on Bibsonomy Microelectron. J. The full citation details ... 2022 DBLP  DOI  BibTeX  RDF
3Ravi Achanta, V. McGahay, S. Boffoli, C. Kothandaraman, J. Gambino High-k MIM dielectric reliability study in 65nm node. Search on Bibsonomy IRPS The full citation details ... 2022 DBLP  DOI  BibTeX  RDF
3Yiming Qu, Yang Shen, Mingji Su, Jiwu Lu, Yi Zhao GHz C-V Characterization Methodology and Its Application for Understanding Polarization Behaviors in High-k Dielectric Films. Search on Bibsonomy IRPS The full citation details ... 2022 DBLP  DOI  BibTeX  RDF
3Chih-Feng Yen, Yu-Ya Huang, Shen-Hao Tsao, Shih-Hao Lin, Chun-Hu Cheng Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices. Search on Bibsonomy ICKII The full citation details ... 2022 DBLP  DOI  BibTeX  RDF
3L. Breuil, L. Nyns, S. Rachidi, K. Banerjee, Antonio Arreghini, J. Bastos, S. Ramesh, G. Van den Bosch, Maarten Rosmeulen High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction. Search on Bibsonomy IMW The full citation details ... 2022 DBLP  DOI  BibTeX  RDF
3Vishank Talesara, Yuxuan Zhang, Junao Cheng, Hongping Zhao, Wu Lu Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric. Search on Bibsonomy DRC The full citation details ... 2022 DBLP  DOI  BibTeX  RDF
3Ana Ruiz, Carlos Couso, Natalia Seoane, Marc Porti, Antonio J. García-Loureiro, Montserrat Nafría Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data. Search on Bibsonomy IEEE Access The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
3Sarika Madhukar Jagtap, Vitthal Janardan Gond Performance Parameter Evaluation of 7nm FinFET by Tuning Metal Work Function and High K Dielectrics. Search on Bibsonomy Int. J. Nat. Comput. Res. The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
3Bingfei Dou, Siwei Huang, Jiajin Song, Xiao Li, Zongming Duan, Xiaojiang Yao, Dongping Xiao, Yongjie Li 0002, Liguo Sun A 21.6dBm CMOS power amplifier using a compact high-k output transformer for X-band application. Search on Bibsonomy IEICE Electron. Express The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
3Konner E. K. Holden, Gavin D. R. Hall, Michael Cook 0004, Chris Kendrick, Kaitlyn Pabst, Bruce Greenwood, Robin Daugherty, Jeff P. Gambino, Derryl D. J. Allman Dielectric Relaxation, Aging and Recovery in High-K MIM Capacitors. Search on Bibsonomy IRPS The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
3Hongxia Liu, Guodu Han, Dong Wang Research on Transparent Resistive Random Memory Based on Lanthanum-based High-k Medium. Search on Bibsonomy ASICON The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
3Rui Li, Mingmin Huang, Xi Zhang, Min Hu, Zhimei Yang, Yao Ma, Min Gong Superjunction MOSFET with Trench Schottky Contact and Embedded High-k Insulator for Excellent Reverse Recovery. Search on Bibsonomy ASICON The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
3Pooja Srivastava, S. C. Bose Simulated Analysis of Double-Gate MOSFET and FinFET Structure Using High-k Materials. Search on Bibsonomy COMS2 The full citation details ... 2021 DBLP  DOI  BibTeX  RDF
3Walid Amir, Dae-Hyun Kim, Tae-Woo Kim Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al2O3/In0.53Ga0.47As on a 300-mm Si Substrate. Search on Bibsonomy IEEE Access The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Aakash Kumar Jain, Mamidala Jagadesh Kumar Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study. Search on Bibsonomy IEEE Access The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Junji Cheng, Jingjie Lin, Weizhen Chen, Shiying Wu, Haimeng Huang, Bo Yi Lateral Power Fin MOSFET With a High-k Passivation for Ultra-Low On-Resistance. Search on Bibsonomy IEEE Access The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Saurav Roy, Arkka Bhattacharyya, Sriram Krishnamoorthy Analytical Modeling and Design of Gallium Oxide Schottky Barrier Diodes Beyond Unipolar Figure of Merit Using High-k Dielectric Superjunction Structures. Search on Bibsonomy CoRR The full citation details ... 2020 DBLP  BibTeX  RDF
3Shun'ichiro Ohmi, Shin Ishimatsu, Yuske Horiuchi, Sohya Kudoh In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering. Search on Bibsonomy IEICE Trans. Electron. The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Ygor Fonseca, Rafael Nóbrega, Ulysses Duarte, Thiago R. Raddo, Iyad Dayoub, Anderson L. Sanches, Murilo Bellezoni Loiola Analysis of Si and GaN GAA-NW-FETs in High-k Gate Oxides for Next Generation Mobile Systems. Search on Bibsonomy CSNDSP The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Ying-Jun Deng, Hao-Lun Hu, Yu-Han Liang, Jian-Ming Chen, Ching-Chuan Chou, Shea-Jue Wang, Mu-Chun Wang Q-factor Integrity of 28nm-node High-k Gate Dielectric. Search on Bibsonomy ICKII The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Yu-Chen Lin, Kai-Chun Zhan, Ji-Min Zhang, Jian-Ming Chen, Cheng-Hsun-Tony Chang, Shea-Jue Wang, Mu-Chun Wang Junction Integrity for 28nm High-k nMOSFETs with Thermal Stress. Search on Bibsonomy ICKII The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Si-Ping Li, Jia-Wei Xu, Wei-Hao Li, Jian-Ming Chen, Chao-Nan Wei, Wen-How Lan, Mu-Chun Wang Patterns of Exposing Integrity of 28nm-node High-k Gate Dielectric on p-substrate with Nitridation Treatments. Search on Bibsonomy ICKII The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Kyung Eun Park, Shun'ichiro Ohmi High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. Search on Bibsonomy DRC The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Akanksha Rohit, Yunus Kelestemur, Savas Kaya, Parthiban Rajan Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and Robotics. Search on Bibsonomy DRC The full citation details ... 2020 DBLP  DOI  BibTeX  RDF
3Swarnil Roy, Sagar Mukherjee, Arka Dutta, Chandan Kumar Sarkar, Chayanika Bose Circuit performance analysis of graded doping of channel of DGMOS with high-k gate stack for analogue and digital application. Search on Bibsonomy IET Circuits Devices Syst. The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3Avtar Singh, Saurabh Chaudhury, Chandan Kumar Pandey, Savitesh Madhulika Sharma, Chandan Kumar Sarkar Design and analysis of high k silicon nanotube tunnel FET device. Search on Bibsonomy IET Circuits Devices Syst. The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3Wei-feng Lü, Liang Dai Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionless FinFET and gate-all-around nanowire MOSFET. Search on Bibsonomy Microelectron. J. The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices. Search on Bibsonomy IEICE Electron. Express The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3Yueyang Liu, Xiangwei Jiang, Liwei Wang 0003, Yunfei En, Runsheng Wang Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack. Search on Bibsonomy IRPS The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3E. R. Hsieh, C. W. Chang, C. C. Chuang, H. W. Chen, Steve S. Chung The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond. Search on Bibsonomy VLSI Circuits The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3Yutao Cai, Yang Wang, Miao Cui, Wen Liu 0010, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. Search on Bibsonomy ICICDT The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper). Search on Bibsonomy DRC The full citation details ... 2019 DBLP  DOI  BibTeX  RDF
3Balaji Jayaraman, Derek Leu, Janakiraman Viraraghavan, Alberto Cestero, Ming Yin, John Golz, Rajesh Reddy Tummuru, Ramesh Raghavan, Dan Moy, Thejas Kempanna, Faraz Khan, Toshiaki Kirihata, Subramanian S. Iyer 80-kb Logic Embedded High-K Charge Trap Transistor-Based Multi-Time-Programmable Memory With No Added Process Complexity. Search on Bibsonomy IEEE J. Solid State Circuits The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Rajneesh Sharma, Rituraj S. Rathore, Ashwani K. Rana Impact of High-k Spacer on Device Performance of Nanoscale Underlap Fully Depleted SOI MOSFET. Search on Bibsonomy J. Circuits Syst. Comput. The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Jiangwei Liu, Yasuo Koide An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors. Search on Bibsonomy Sensors The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Nicolo Oliva, Emanuele A. Casu, Matteo Cavalleri, Adrian M. Ionescu Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control. Search on Bibsonomy ESSDERC The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Badreddine Zerroumda, Fayçal Djeffal, Toufik Bentrcia, Hichem Ferhati Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. Search on Bibsonomy ICSENT The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3D. S. Huang, J. H. Lee, Y. S. Tsai, Y. F. Wang, Y. S. Huang, C. K. Lin, Ryan Lu, Jun He Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. Search on Bibsonomy IRPS The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Weizhen Chen, Junji Cheng, Jingjie Lin, Xingbi Chen Simulation study on the high-k SJ-VDMOS with gradient side-wall. Search on Bibsonomy MIPRO The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Eric Hunt-Schroeder, Darren Anand, John A. Fifield, Mark Jacunski, Michael Roberge, Dale E. Pontius, Kevin Batson, Toshiaki Kirihata 14NM FinFET 1.5MB Embedded High-K Charge Trap Transistor One Time Programmable Memory Using Dynamic Adaptive Programming. Search on Bibsonomy VLSI Circuits The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Yun-Sheng Chan, Po-Tsang Huang, Shang-Lin Wu, Sheng-Chi Lung, Wei-Chang Wang, Wei Hwang, Ching-Te Chuang 0.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS Process. Search on Bibsonomy SoCC The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Anna Grazia Monteduro, Zoobia Ameer, Silvia Rizzato, Angelo Leo, Maurizio Martino, Anna Paola Caricato, Vittorianna Tasco, Indira Chaitanya Lekshmi, Abhijit Hazarika, Debraj Choudhury, Elisabetta Mazzotta, Cosimino Malitesta, D. D. Sarma, Giuseppe Maruccio High-k YCTO thin films for electronics. Search on Bibsonomy ICICDT The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Jeffrey A. Smith, Hideki Takeuchi, Robert Stephenson, Yi-Ann Chen, Marek Hytha, Robert J. Mears, Suman Datta Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack. Search on Bibsonomy DRC The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Namphung Peimyoo, Jake Mehew, Matt D. Barnes, Adolfo De Sanctis, Iddo Amit, Janire Escolar, Konstantinos Anastasiou, Ali Gholina, Aidan P. Rooney, Sarah Haigh, Saverio Russo, Monica Felicia Craciun, Freddie Withers Photo-oxidized HfS2 - An embeddable and writable high-k dielectric for flexible Van der Waals nano-electronics. Search on Bibsonomy DRC The full citation details ... 2018 DBLP  DOI  BibTeX  RDF
3Shimpei Yamaguchi, Zeynel Bayindir, Xiaoli He, Suresh Uppal, Purushothaman Srinivasan, Chloe Yong, Dongil Choi, Manoj Joshi, Hyuck Soo Yang, Owen Hu, Srikanth Samavedam, Dong Kyun Sohn Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
3Slah Hlali, Neila Hizem, Liviu Militaru, A. Kalboussi, Abdelkader Souifi Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
3Mengnan Ke, Mitsuru Takenaka, Shinichi Takagi Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers. Search on Bibsonomy ESSDERC The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
3Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Sahil Preet Singh, Hank Cheng, Hidehiro Fujiwara, Jih-Yu Lin, Kao-Cheng Lin, John Hung, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu 12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. Search on Bibsonomy ISSCC The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
3D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. Search on Bibsonomy ICICDT The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
3Kai-Ping Chang, Han-Hsiang Tai, Jer-Chyi Wang, Chao-Sung Lai Graphene nanodots with high-k dielectrics for flash memory applications. Search on Bibsonomy ASICON The full citation details ... 2017 DBLP  DOI  BibTeX  RDF
3Tilo Köckritz, René Luther, Georgi Paschew, Irene Jansen, Andreas Richter, Oliver Jost, Andreas Schönecker, Eckhard Beyer Full Polymer Dielectric Elastomeric Actuators (DEA) Functionalised with Carbon Nanotubes and High-K Ceramics. Search on Bibsonomy Micromachines The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Sanjit Kumar Swain, Arka Dutta, Sarosij Adak, Sudhansu Kumar Pati, Chandan Kumar Sarkar Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Feng Ji, Jing-Ping Xu, Lu Liu, Wing Man Tang, Pui To Lai A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Andreas Kerber Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Janakiraman Viraraghavan, Derek Leu, Balaji Jayaraman, Alberto Cestero, Robert Kilker, Ming Yin, John Golz, Rajesh Reddy Tummuru, Ramesh Raghavan, Dan Moy, Thejas Kempanna, Faraz Khan, Toshiaki Kirihata, Subramanian S. Iyer 80Kb 10ns read cycle logic Embedded High-K charge trap Multi-Time-Programmable Memory scalable to 14nm FIN with no added process complexity. Search on Bibsonomy VLSI Circuits The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Bo Song, Jianliang Gao, Weimao Ke, Xiaohua Hu 0001 Achieving high k-coverage and k-consistency in global alignment of multiple PPI networks. Search on Bibsonomy BIBM The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Shraddha Thakre, Ankur Beohar, Vikas Vijayvargiya, Nandakishor Yadav, Santosh Kumar Vishvakarma Investigation of DC Characteristic on DG-Tunnel FET with High-K Dielectric Using Distinct Device Parameter. Search on Bibsonomy iNIS The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Nandakishor Yadav, Ankur Beohar, Santosh Kumar Vishvakarma Analysis of Single-Trap-Induced Random Telegraph Noise on Asymmetric High-k Spacer FinFET. Search on Bibsonomy iNIS The full citation details ... 2016 DBLP  DOI  BibTeX  RDF
3Mitsuhiko Igarashi, Toshifumi Uemura, Ryo Mori, Hiroshi Kishibe, Midori Nagayama, Masaaki Taniguchi, Kohei Wakahara, Toshiharu Saito, Masaki Fujigaya, Kazuki Fukuoka, Koji Nii, Takeshi Kataoka, Toshihiro Hattori A 28 nm High-k/MG Heterogeneous Multi-Core Mobile Application Processor With 2 GHz Cores and Low-Power 1 GHz Cores. Search on Bibsonomy IEEE J. Solid State Circuits The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3Tony Tae-Hyoung Kim, Pong-Fei Lu, Keith A. Jenkins, Chris H. Kim A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology. Search on Bibsonomy IEEE Trans. Very Large Scale Integr. Syst. The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3Binola K. Jebalin, A. Shobha Rekh, P. Prajoon, N. Mohankumar 0002, D. Nirmal The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs. Search on Bibsonomy Microelectron. J. The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3K. C. Lin, P. C. Juan, C. H. Liu, Mu-Chun Wang, C. H. Chou Leakage current mechanism and effect of Y2O3 doped with Zr high-K gate dielectrics. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3Hsien-Chin Chiu, Chia-Hsuan Wu, Ji-Fan Chi, Jen-Inn Chyi, Geng-Yen Lee N2O treatment enhancement-mode InAlN/GaN HEMTs with HfZrO2 High-k insulator. Search on Bibsonomy Microelectron. Reliab. The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. Search on Bibsonomy ESSDERC The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3M. N. Chang, Y.-H. Lee, S. Y. Lee, C. C. Chiu, D. Maji, K. Wu An investigation of capacitance aging model for extreme low-k and high-k dielectrics. Search on Bibsonomy IRPS The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, Richard G. Southwick, Eduard Cartier NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation. Search on Bibsonomy IRPS The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3A. Kerber Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies. Search on Bibsonomy IRPS The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3A. Bezza, M. Rafik, David Roy 0001, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. Search on Bibsonomy IRPS The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs. Search on Bibsonomy IRPS The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3Minki Cho, Carlos Tokunaga, Muhammad M. Khellah, James W. Tschanz, Vivek De Aging-aware Adaptive Voltage Scaling in 22nm high-K/metal-gate tri-gate CMOS. Search on Bibsonomy CICC The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3Kanchan Cecil, Jawar Singh Performance Enhancement of Dopingless Tunnel-FET Based on Ge-Source with High-k. Search on Bibsonomy iNIS The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
3Sanjeev Kumar Sharma, Balwinder Raj, Mamta Khosla Performance enhancement of junctionless nanowire FET with laterally graded channel doping and high-K spacers. Search on Bibsonomy GCCE The full citation details ... 2015 DBLP  DOI  BibTeX  RDF
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