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Results
Found 124 publication records. Showing 124 according to the selection in the facets
Hits ?▲ |
Authors |
Title |
Venue |
Year |
Link |
Author keywords |
66 | Dhruva Ghai, Saraju P. Mohanty, Elias Kougianos, Priyadarsan Patra |
A PVT aware accurate statistical logic library for high- metal-gate nano-CMOS. |
ISQED |
2009 |
DBLP DOI BibTeX RDF |
|
66 | Hamed F. Dadgour, Vivek De, Kaustav Banerjee |
Statistical modeling of metal-gate work-function variability in emerging device technologies and implications for circuit design. |
ICCAD |
2008 |
DBLP DOI BibTeX RDF |
|
61 | Yangyuan Wang, Xing Zhang 0002, Xiaoyan Liu, Ru Huang |
Novel devices and process for 32 nm CMOS technology and beyond. |
Sci. China Ser. F Inf. Sci. |
2008 |
DBLP DOI BibTeX RDF |
high-k, non-planar MOSFET, quasi-ballistic transport, CMOS technology, metal gate |
44 | Kelin J. Kuhn |
CMOS scaling beyond 32nm: challenges and opportunities. |
DAC |
2009 |
DBLP DOI BibTeX RDF |
high-k, CMOS, orientation, strain, metal-gate |
44 | Amit Agarwal 0001, Kunhyuk Kang, Swarup Bhunia, James D. Gallagher, Kaushik Roy 0001 |
Effectiveness of low power dual-Vt designs in nano-scale technologies under process parameter variations. |
ISLPED |
2005 |
DBLP DOI BibTeX RDF |
process variation, yield, leakage, dual-Vt, metal gate |
41 | Saibal Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, Rajiv V. Joshi, Ching-Te Chuang, Kaushik Roy 0001 |
Modeling and Analysis of Gate Leakage in Ultra-thin Oxide Sub-50nm Double Gate Devices and Circuits. |
ISQED |
2005 |
DBLP DOI BibTeX RDF |
|
40 | Ru Huang, HanMing Wu, Jinfeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, Runsheng Wang, Liangliang Zhang, Xing Zhang 0002, Yangyuan Wang |
Challenges of 22 nm and beyond CMOS technology. |
Sci. China Ser. F Inf. Sci. |
2009 |
DBLP DOI BibTeX RDF |
22 nm technology node, device architectures, metal gate/high K dielectrics, ultra low K dielectrics, CMOS technology |
38 | Santosh Kumar Gupta, Srimanta Baishya |
On the analog and radio frequency performance of Junctionless Single Metal Gate cylindrical surround gate metal-oxide-semiconductor field-effect transistors. |
Simul. |
2014 |
DBLP DOI BibTeX RDF |
|
32 | Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang, Kaushik Roy 0001 |
Modeling and Analysis of Leakage Currents in Double-Gate Technologies. |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. |
2006 |
DBLP DOI BibTeX RDF |
|
32 | Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang, Kaushik Roy 0001 |
Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits. |
ISLPED |
2005 |
DBLP DOI BibTeX RDF |
double-gate devices, quantum effect, stacking effect, estimation, SRAM, gate leakage, subthreshold leakage |
29 | Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain |
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon. |
IEEE Trans. Reliab. |
2015 |
DBLP DOI BibTeX RDF |
|
29 | Young Moon Kim, Jun Seomun, Hyung-Ock Kim, Kyung Tae Do, Jung Yun Choi, Kee Sup Kim, Matthias Sauer 0002, Bernd Becker 0001, Subhasish Mitra |
Detection of early-life failures in high-K metal-gate transistors and ultra low-K inter-metal dielectrics. |
CICC |
2013 |
DBLP DOI BibTeX RDF |
|
29 | Saraju P. Mohanty, Elias Kougianos |
Design of experiments and integer linear programming-assisted conjugate-gradient optimisation of high-κ/metal-gate nano-complementary metal-oxide semiconductor static random access memory. |
IET Comput. Digit. Tech. |
2012 |
DBLP DOI BibTeX RDF |
|
29 | Sarvesh H. Kulkarni, Zhanping Chen, Jun He, Lei Jiang 0013, Brian Pedersen, Kevin Zhang 0001 |
A 4 kb Metal-Fuse OTP-ROM Macro Featuring a 2 V Programmable 1.37 μ m 2 1T1R Bit Cell in 32 nm High-k Metal-Gate CMOS. |
IEEE J. Solid State Circuits |
2010 |
DBLP DOI BibTeX RDF |
|
29 | Chel-Jong Choi, Ha-Yong Yang, Hyo-Bong Hong, Jin-Gyu Kim, Sung-Yong Chang, Jouhahn Lee |
Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film. |
Microelectron. Reliab. |
2009 |
DBLP DOI BibTeX RDF |
|
28 | Samar K. Saha |
Modeling Process Variability in Scaled CMOS Technology. |
IEEE Des. Test Comput. |
2010 |
DBLP DOI BibTeX RDF |
compact variability modeling, gate-oxide thickness variability, high-k dielectric, line-edge roughness, polysilicon granularity, random discrete dopants, scaled CMOS technology, statistical compact modeling, design and test, process variability, metal gate |
28 | David Wolpert 0001, Paul Ampadu |
Normal and Reverse Temperature Dependence in Variation-Tolerant Nanoscale Systems with High-k Dielectrics and Metal Gates. |
NanoNet |
2008 |
DBLP DOI BibTeX RDF |
Reverse temperature dependence, high-k dielectric, variation-tolerant, metal gate |
28 | Wei-feng Lü, Liang Dai |
Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionless FinFET and gate-all-around nanowire MOSFET. |
Microelectron. J. |
2019 |
DBLP DOI BibTeX RDF |
|
28 | Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi |
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. |
IRPS |
2019 |
DBLP DOI BibTeX RDF |
|
28 | E. R. Hsieh, C. W. Chang, C. C. Chuang, H. W. Chen, Steve S. Chung |
The Demonstration of Gate Dielectric-fuse 4kb OTP Memory Feasible for Embedded Applications in High-k Metal-gate CMOS Generations and Beyond. |
VLSI Circuits |
2019 |
DBLP DOI BibTeX RDF |
|
28 | Minjung Jin, Kangjung Kim, Yoohwan Kim, Hyewon Shim, Jinju Kim, Gunrae Kim, Sangwoo Pae |
Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. |
Microelectron. Reliab. |
2018 |
DBLP DOI BibTeX RDF |
|
28 | Wei-feng Lü, Mi Lin, Haipeng Zhang |
Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs. |
FSDM |
2017 |
DBLP DOI BibTeX RDF |
|
28 | Minki Cho, Carlos Tokunaga, Muhammad M. Khellah, James W. Tschanz, Vivek De |
Aging-aware Adaptive Voltage Scaling in 22nm high-K/metal-gate tri-gate CMOS. |
CICC |
2015 |
DBLP DOI BibTeX RDF |
|
28 | Dongwoo Kim 0002, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park 0005, Bongkoo Kang |
Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. |
Microelectron. Reliab. |
2012 |
DBLP DOI BibTeX RDF |
|
28 | Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan |
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. |
ESSDERC |
2012 |
DBLP DOI BibTeX RDF |
|
28 | Dick James |
Intel Ivy Bridge unveiled - The first commercial tri-gate, high-k, metal-gate CPU. |
CICC |
2012 |
DBLP DOI BibTeX RDF |
|
28 | D. H. Triyoso, V. Jaschke, Jeff Shu, S. Mutas, Klaus Hempel, Jamie K. Schaeffer, Markus Lenski |
Robust PEALD SiN spacer for gate first high-k metal gate integration. |
ICICDT |
2012 |
DBLP DOI BibTeX RDF |
|
28 | Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh |
Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET with 65 nm CMOS Process. |
IEICE Trans. Electron. |
2011 |
DBLP DOI BibTeX RDF |
|
28 | Santosh Kumar Vishvakarma, V. Komal Kumar, Ashok K. Saxena, Sudeb Dasgupta |
Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET. |
Microelectron. J. |
2011 |
DBLP DOI BibTeX RDF |
|
28 | Jing-Ping Xu, X. Xiao, Pui-To Lai |
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode. |
Microelectron. Reliab. |
2010 |
DBLP DOI BibTeX RDF |
|
28 | Ralf Endres, Yordan Stefanov, Udo Schwalke |
Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology. |
Microelectron. Reliab. |
2007 |
DBLP DOI BibTeX RDF |
|
28 | S. Chatterjee, Yue Kuo, J. Lu, J.-Y. Tewg, P. Majhi |
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. |
Microelectron. Reliab. |
2006 |
DBLP DOI BibTeX RDF |
|
28 | Takeo Matsuki, Kazuyoshi Torii, Takeshi Maeda, Yasushi Akasaka, Kiyoshi Hayashi, Naoki Kasai, Tsunetoshi Arikado |
Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs. |
IEICE Trans. Electron. |
2005 |
DBLP DOI BibTeX RDF |
|
28 | S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt |
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development. |
Microelectron. Reliab. |
2005 |
DBLP DOI BibTeX RDF |
|
28 | Takayuki Yamada, Masaru Moriwaki, Yoshinao Harada, Shinji Fujii, Koji Eriguchi |
Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics. |
Microelectron. Reliab. |
2001 |
DBLP DOI BibTeX RDF |
|
24 | Nilanjan Mukherjee 0001, Janusz Rajski, Jerzy Tyszer |
Defect Aware to Power Conscious Tests - The New DFT Landscape. |
VLSI Design |
2009 |
DBLP DOI BibTeX RDF |
|
20 | Deblina Sarkar, Samiran Ganguly, Deepanjan Datta, A. Ananda Prasad Sarab, Sudeb Dasgupta |
Modeling of Leakages in Nano-Scale DG MOSFET to Implement Low Power SRAM: A Device/Circuit Co-Design. |
VLSI Design |
2007 |
DBLP DOI BibTeX RDF |
|
19 | Mohammad Salim Wani, Hend I. Alkhammash, M. Shiblee, Sajad A. Loan |
Design and Simulation of Dual-Metal-Gate Tunnel Field Effect Transistor with Biomolecule Sensing Applications. |
ICM |
2023 |
DBLP DOI BibTeX RDF |
|
19 | Bruna Cardoso Paz, Victor El-Homsy, David J. Niegemann, Bernhard Klemt, Emmanuel Chanrion, Vivien Thiney, Baptiste Jadot, Pierre-André Mortemousque, Benoit Bertrand, Thomas Bedecarrats, Heimanu Niebojewski, François Perruchot, Silvano De Franceschi, Maud Vinet, Matias Urdampilleta, Tristan Meunier |
Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology. |
ESSCIRC |
2022 |
DBLP DOI BibTeX RDF |
|
19 | Khalil Tamersit, Hocine Bourouba, Abdellah Kouzou |
Improving the Current Ratio and Ambipolar Behavior of Junctionless CNTFETs Using Graded Metal Gate Work Function: A Quantum Simulation. |
SSD |
2022 |
DBLP DOI BibTeX RDF |
|
19 | Marcel A. Kossel, Vishal Khatri, Matthias Braendli, Pier Andrea Francese, Thomas Morf, Serdar A. Yonar, Mridula Prathapan, Eric J. Lukes, Raymond A. Richetta, Carrie Cox |
An 8b DAC-Based SST TX Using Metal Gate Resistors with 1.4pJ/b Efficiency at 112Gb/s PAM-4 and 8-Tap FFE in 7iim CMOS. |
ISSCC |
2021 |
DBLP DOI BibTeX RDF |
|
19 | Shaun Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, Philex Fan, Chia-En Huang, Yu-Der Chih, Yih Wang, Jonathan Chang |
A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. |
VLSI Circuits |
2021 |
DBLP DOI BibTeX RDF |
|
19 | Jing-Chyi Liao, Paul Ko, M. H. Hsieh, Zheng Zeng |
Self-healing LDMOSFET for high-voltage application on high-k/metal gate CMOS process. |
IRPS |
2020 |
DBLP DOI BibTeX RDF |
|
19 | Tianyu Yu, Liang Dai, Zhifeng Zhao, Weifeng Lyu, Mi Lin |
Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor. |
MLIS |
2020 |
DBLP DOI BibTeX RDF |
|
19 | Cuiqin Xu, Xuejiao Wang, Wei Liu |
Threshold Voltage Tuning Of 22 nm FD-SOI Devices Fabricated With Metal Gate Last Process. |
ICICDT |
2019 |
DBLP DOI BibTeX RDF |
|
19 | D. S. Huang, J. H. Lee, Y. S. Tsai, Y. F. Wang, Y. S. Huang, C. K. Lin, Ryan Lu, Jun He |
Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. |
IRPS |
2018 |
DBLP DOI BibTeX RDF |
|
19 | Yun-Sheng Chan, Po-Tsang Huang, Shang-Lin Wu, Sheng-Chi Lung, Wei-Chang Wang, Wei Hwang, Ching-Te Chuang |
0.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS Process. |
SoCC |
2018 |
DBLP DOI BibTeX RDF |
|
19 | Junrui Zhang, Francesco Bellando, Maneesha Rupakula, Erick Garcia Cordero, N. Ebejer, J. Longo, Fabien Wildhaber, Hoel Guerin, Adrian Mihai Ionescu |
CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity. |
DRC |
2018 |
DBLP DOI BibTeX RDF |
|
19 | Jeffrey A. Smith, Hideki Takeuchi, Robert Stephenson, Yi-Ann Chen, Marek Hytha, Robert J. Mears, Suman Datta |
Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate Stack. |
DRC |
2018 |
DBLP DOI BibTeX RDF |
|
19 | Deepa Anand, M. Swathi, A. Purushothaman, Sundararaman Gopalan |
Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate. |
ICACDS (1) |
2018 |
DBLP DOI BibTeX RDF |
|
19 | Shimpei Yamaguchi, Zeynel Bayindir, Xiaoli He, Suresh Uppal, Purushothaman Srinivasan, Chloe Yong, Dongil Choi, Manoj Joshi, Hyuck Soo Yang, Owen Hu, Srikanth Samavedam, Dong Kyun Sohn |
Effective work-function control technique applicable to p-type FinFET high-k/metal gate devices. |
Microelectron. Reliab. |
2017 |
DBLP DOI BibTeX RDF |
|
19 | Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Sahil Preet Singh, Hank Cheng, Hidehiro Fujiwara, Jih-Yu Lin, Kao-Cheng Lin, John Hung, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu |
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. |
ISSCC |
2017 |
DBLP DOI BibTeX RDF |
|
19 | D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter |
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. |
ICICDT |
2017 |
DBLP DOI BibTeX RDF |
|
19 | Tillmann Krauss, Frank Wessely, Udo Schwalke |
Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. |
DTIS |
2017 |
DBLP DOI BibTeX RDF |
|
19 | Andreas Kerber |
Device to circuit reliability correlations for metal gate/high-k transistors in scaled CMOS technologies. |
Microelectron. Reliab. |
2016 |
DBLP DOI BibTeX RDF |
|
19 | Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan |
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. |
ESSDERC |
2016 |
DBLP DOI BibTeX RDF |
|
19 | Tillmann Krauss, Frank Wessely, Udo Schwalke |
Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. |
SSD |
2016 |
DBLP DOI BibTeX RDF |
|
19 | Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Jonathan Chang |
A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. |
IEEE J. Solid State Circuits |
2015 |
DBLP DOI BibTeX RDF |
|
19 | Tony Tae-Hyoung Kim, Pong-Fei Lu, Keith A. Jenkins, Chris H. Kim |
A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology. |
IEEE Trans. Very Large Scale Integr. Syst. |
2015 |
DBLP DOI BibTeX RDF |
|
19 | Shraddha Kothari, Chandan Joishi, Dhirendra Vaidya, Hasan Nejad, Benjamin Colombeau, Swaroop Ganguly, Saurabh Lodha |
Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applications. |
ESSDERC |
2015 |
DBLP DOI BibTeX RDF |
|
19 | Chandrasekharan Kothandaraman, X. Chen, Dan Moy, D. Lea, Sami Rosenblatt, Faraz Khan, Derek Leu, Toshiaki Kirihata, D. Ioannou, Giuseppe La Rosa, J. B. Johnson, Norman Robson, Subramanian S. Iyer |
Oxygen vacancy traps in Hi-K/Metal gate technologies and their potential for embedded memory applications. |
IRPS |
2015 |
DBLP DOI BibTeX RDF |
|
19 | A. Kerber |
Impact of RTN on stochastic BTI degradation in scaled metal gate/high-k CMOS technologies. |
IRPS |
2015 |
DBLP DOI BibTeX RDF |
|
19 | Miaomiao Wang 0006, Zuoguang Liu, Tenko Yamashita, James H. Stathis, Chia-Yu Chen |
Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET. |
IRPS |
2015 |
DBLP DOI BibTeX RDF |
|
19 | A. Bezza, M. Rafik, David Roy 0001, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo |
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. |
IRPS |
2015 |
DBLP DOI BibTeX RDF |
|
19 | Jungyul Pyo, Youngmin Shin, Hoi-Jin Lee, Sung-il Bae, Min-Su Kim, Kwangil Kim, Ken Shin, Yohan Kwon, Heungchul Oh, Jaeyoung Lim, Dong-Wook Lee, Jongho Lee, Inpyo Hong, Kyungkuk Chae, Heon-Hee Lee, Sung-Wook Lee, Seongho Song, Chunghee Kim, Jin-Soo Park, Heesoo Kim, Sunghee Yun, Ukrae Cho, Jae Cheol Son, Sungho Park |
23.1 20nm high-K metal-gate heterogeneous 64b quad-core CPUs and hexa-core GPU for high-performance and energy-efficient mobile application processor. |
ISSCC |
2015 |
DBLP DOI BibTeX RDF |
|
19 | Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean |
Modeling FinFET metal gate stack resistance for 14nm node and beyond. |
ICICDT |
2015 |
DBLP DOI BibTeX RDF |
|
19 | Miao Liao, Zhenghao Gan |
New insight on negative bias temperature instability degradation with drain bias of 28 nm High-K Metal Gate p-MOSFET devices. |
Microelectron. Reliab. |
2014 |
DBLP DOI BibTeX RDF |
|
19 | Yasmin Abdul Wahab, Norhayati Soin, Sharifah Wan Muhamad Hatta |
Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS. |
Microelectron. Reliab. |
2014 |
DBLP DOI BibTeX RDF |
|
19 | Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer |
Impact of Off State Stress on advanced high-K metal gate NMOSFETs. |
ESSDERC |
2014 |
DBLP DOI BibTeX RDF |
|
19 | Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, George H. Chang, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Sreedhar Natarajan, Jonathan Chang |
13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. |
ISSCC |
2014 |
DBLP DOI BibTeX RDF |
|
19 | Sami Rosenblatt, Daniel Fainstein, Alberto Cestero, John Safran, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer |
Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAM. |
IEEE J. Solid State Circuits |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Se-Hyun Yang, Jungyul Pyo, Youngmin Shin, Jae Cheol Son |
A 1.6 GHz quad-core application processor manufactured in 32 nm high-k metal gate process for smart mobile devices. |
IEEE Commun. Mag. |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang |
Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. |
Microelectron. Reliab. |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Wen-Kuan Yeh, Po-Ying Chen, Kwang-Jow Gan, Jer-Chyi Wang, Chao-Sung Lai |
The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET. |
Microelectron. Reliab. |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling |
Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETs. |
ESSDERC |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota |
Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. |
ESSDERC |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Min Chen 0024, Vijay Reddy, Srikanth Krishnan, Jay Ondrusek, Yu Cao 0001 |
ACE: A robust variability and aging sensor for high-k/metal gate SoC. |
ESSDERC |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Masaki Fujigaya, Noriaki Sakamoto, Takao Koike, Takahiro Irita, Kohei Wakahara, Tsugio Matsuyama, Keiji Hasegawa, Toshiharu Saito, Akira Fukuda, Kaname Teranishi, Kazuki Fukuoka, Noriaki Maeda, Koji Nii, Takeshi Kataoka, Toshihiro Hattori |
A 28nm High-κ metal-gate single-chip communications processor with 1.5GHz dual-core application processor and LTE/HSPA+-capable baseband processor. |
ISSCC |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Youngmin Shin, Ken Shin, Prashant Kenkare, Rajesh Kashyap, Hoi-Jin Lee, Dongjoo Seo, Brian Millar, Yohan Kwon, Ravi Iyengar, Min-Su Kim, Ahsan Chowdhury, Sung-il Bae, Inpyo Hong, Wookyeong Jeong, Aaron Lindner, Ukrae Cho, Keith Hawkins, Jae-Cheol Son, Seung Ho Hwang |
28nm high- metal-gate heterogeneous quad-core CPUs for high-performance and energy-efficient mobile application processor. |
ISSCC |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Jonathan Chang, Yen-Huei Chen, Hank Cheng, Wei-Min Chan, Hung-Jen Liao, Quincy Li, Stanley Chang, Sreedhar Natarajan, Robin Lee, Ping-Wei Wang, Shyue-Shyh Lin, Chung-Cheng Wu, Kuan-Lun Cheng, Min Cao, George H. Chang |
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. |
ISSCC |
2013 |
DBLP DOI BibTeX RDF |
|
19 | Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Carl Radens, Adnan Seferagic |
A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements. |
IEEE J. Solid State Circuits |
2012 |
DBLP DOI BibTeX RDF |
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19 | Masaoud Houshmand Kaffashian, Reza Lotfi, Khalil Mafinezhad, Hamid Mahmoodi |
Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS. |
Microelectron. Reliab. |
2012 |
DBLP DOI BibTeX RDF |
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19 | Se-Hyun Yang, Seogjun Lee, Jae Young Lee, Jeonglae Cho, Hoi-Jin Lee, Dongsik Cho, Junghun Heo, Sunghoon Cho, Youngmin Shin, Sunghee Yun, Euiseok Kim, Ukrae Cho, Edward Pyo, Man Hyuk Park, Jae-Cheol Son, Chinhyun Kim, Jeongnam Youn, Youngki Chung, Sungho Park, Seung Ho Hwang |
A 32nm high-k metal gate application processor with GHz multi-core CPU. |
ISSCC |
2012 |
DBLP DOI BibTeX RDF |
|
19 | Robin Lee, Jung-Ping Yang, Chia-En Huang, Chih-Chieh Chiu, Wei-Shuo Kao, Hong-Chen Cheng, Hong-Jen Liao, Jonathan Chang |
A 28nm high-k metal-gate SRAM with Asynchronous Cross-Couple Read Assist (AC2RA) circuitry achieving 3x reduction on speed variation for single ended arrays. |
VLSIC |
2012 |
DBLP DOI BibTeX RDF |
|
19 | Peter Kuoyuan Hsu, Yukit Tang, Derek Tao, Ming-Chieh Huang, Min-Jer Wang, C. H. Wu, Quincy Lee |
A SRAM cell array with adaptive leakage reduction scheme for data retention in 28nm high-k metal-gate CMOS. |
VLSIC |
2012 |
DBLP DOI BibTeX RDF |
|
19 | Daniel Fainstein, Sami Rosenblatt, Alberto Cestero, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer |
Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAM. |
VLSIC |
2012 |
DBLP DOI BibTeX RDF |
|
19 | Pramod Kolar, Eric Karl, Uddalak Bhattacharya, Fatih Hamzaoglu, Henry Nho, Yong-Gee Ng, Yih Wang, Kevin Zhang 0001 |
A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation. |
IEEE J. Solid State Circuits |
2011 |
DBLP DOI BibTeX RDF |
|
19 | Hao-I Yang, Wei Hwang, Ching-Te Chuang |
Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices. |
IEEE Trans. Very Large Scale Integr. Syst. |
2011 |
DBLP DOI BibTeX RDF |
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19 | Takeshi Sasaki, Takuya Imamoto, Tetsuo Endoh |
Temperature Dependency of Driving Current in High-k/Metal Gate MOSFET and Its Influence on CMOS Inverter Circuit. |
IEICE Trans. Electron. |
2011 |
DBLP DOI BibTeX RDF |
|
19 | Deepesh Ranka, Ashwani K. Rana, Rakesh Kumar Yadav, Kamalesh Yadav, Devendra Giri |
Performance evaluation of FD-SOI Mosfets for different metal gate work function |
CoRR |
2011 |
DBLP BibTeX RDF |
|
19 | Jiann-Shiun Yuan, Wen-Kuan Yeh, Shuyu Chen, Chia-Wei Hsu |
NBTI reliability on high-k metal-gate SiGe transistor and circuit performances. |
Microelectron. Reliab. |
2011 |
DBLP DOI BibTeX RDF |
|
19 | Florian Chouard, Shailesh More, Michael Fulde, Doris Schmitt-Landsiedel |
An analog perspective on device reliability in 32nm high-κ metal gate technology. |
DDECS |
2011 |
DBLP DOI BibTeX RDF |
|
19 | Martin M. Frank |
High-k/metal gate innovations enabling continued CMOS scaling. |
ESSCIRC |
2011 |
DBLP DOI BibTeX RDF |
|
19 | S. H. Yang, J. Y. Sheu, M. K. Ieong, M. H. Chiang, T. Yamamoto, J. J. Liaw, S. S. Chang, Y. M. Lin, T. L. Hsu, J. R. Hwang, J. K. Ting, C. H. Wu, K. C. Ting, F. C. Yang, C. M. Liu, I. L. Wu, Y. M. Chen, S. J. Chent, K. S. Chen, J. Y. Cheng, M. H. Tsai, W. Chang, R. Chen, C. C. Chen, T. L. Lee, C. K. Lin, S. C. Yang, Y. M. Sheu, J. T. Tzeng, L. C. Lu, S. M. Jang, Carlos H. Diaz, Yuh-Jier Mii |
28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications. |
CICC |
2011 |
DBLP DOI BibTeX RDF |
|
19 | Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Frank Pavlik, Adnan Seferagic, Liang-Yu Chen, Shang-Bin Ko, Carl Radens |
A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation enabled by stability, write-ability and read-ability enhancements. |
ISSCC |
2011 |
DBLP DOI BibTeX RDF |
|
19 | Yih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang 0001, Mark Bohr |
A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management. |
IEEE J. Solid State Circuits |
2010 |
DBLP DOI BibTeX RDF |
|
19 | Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang, Feng-Renn Juang, Chien-Ting Lin, Chieh-Ming Lai |
Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing. |
Microelectron. Reliab. |
2010 |
DBLP DOI BibTeX RDF |
|
19 | James H. Stathis, M. Wang, K. Zhao |
Reliability of advanced high-k/metal-gate n-FET devices. |
Microelectron. Reliab. |
2010 |
DBLP DOI BibTeX RDF |
|
19 | Enrique Miranda 0002, Eamon O'Connor, Paul K. Hurley |
Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. |
Microelectron. Reliab. |
2010 |
DBLP DOI BibTeX RDF |
|
19 | Florian Chouard, Michael Fulde, Doris Schmitt-Landsiedel |
Reliability assessment of voltage controlled oscillators in 32nm high-κ metal gate technology. |
ESSCIRC |
2010 |
DBLP DOI BibTeX RDF |
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